Fast Switching N Channel MOSFET JSCJ CJ3134KW for in Drivers of Relays Solenoids and Power Supplies
Key Attributes
Model Number:
CJ3134KW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-
RDS(on):
800mΩ@1.8V,450mA
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ3134KW
Package:
SOT-323
Product Description
Product Overview
The CJ3134KW is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It is designed for high-side switching applications, offering low on-resistance, low threshold voltage, and fast switching speeds. This MOSFET is suitable for use in drivers for relays and solenoids, battery-operated systems, power supply converter circuits, and load/power switching in devices like cell phones, pagers, lamps, hammers, displays, and memories.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name and URL)
- Material: Plastic-Encapsulate MOSFETS
- Certifications: None explicitly mentioned
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.35 | 1.1 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =10V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =4.5V, ID =650mA | 380 | m | ||
| VGS =2.5V, ID =550mA | 450 | |||||
| VGS =1.8V, ID =450mA | 800 | |||||
| Forward Transconductance | gFS | VDS =10V, ID =800mA | 1 | S | ||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 120 | pF | ||
| Output Capacitance | Coss | 20 | ||||
| Reverse Transfer Capacitance | Crss | 15 | ||||
| Switching Times | td(on) | VDD=10V,ID=500mA, VGS=4.5V,RG=10 | 6.7 | ns | ||
| tr | 4.8 | |||||
| td(off) | 17.3 | |||||
| tf | 7.4 | |||||
| Drain-Source Diode Forward Voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| Power Dissipation | PD | Ta=25, no heat sink | 200 | mW | ||
| Storage Temperature | Tstg | -55 | +150 | |||
| Junction Temperature | Tj | 150 |
2410121440_JSCJ-CJ3134KW_C110101.pdf
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