Surface Mount P Channel Power MOSFET JSCJ CJQ4435A with Low RDS ON and Advanced Trench Technology
Key Attributes
Model Number:
CJQ4435A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.9A
RDS(on):
25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
149pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.395nF
Output Capacitance(Coss):
202pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
CJQ4435A
Package:
SOP-8
Product Description
Product Description
The CJQ4435A is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. Key advantages include a Super High Density Cell Design for extremely low RDS(ON) and a surface mount package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Device Code: CJQ4435A
- Equivalent Circuit Code: Q4435A
- Marking: Q4435A XX (XX = Code)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (TA=25 unless otherwise noted) | -9.9 | A | ||
| Pulsed Drain Current | IDM | -40 | A | |||
| Single Pulsed Avalanche Energy | EAS | 76 | mJ | |||
| Power Dissipation | PD | (TA=25 unless otherwise noted) | 2.5 | W | ||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250uA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V, VGS =0V | -1.0 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.1 | -1.6 | -2.2 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-9.1A | 13 | mΩ | ||
| VGS =-4.5V, ID =-6.9A | 17 | mΩ | ||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 1395 | pF | ||
| Output capacitance | Coss | 202 | pF | |||
| Reverse transfer capacitance | Crss | 149 | pF | |||
| Total gate charge | Qg | VGS=-4.5V, VDD=-15V, ID=-9.1A | 27 | nC | ||
| Gate-source charge | Qgs | 5.7 | nC | |||
| Gate-drain charge | Qgd | 2.6 | nC | |||
| Turn-on delay time | td(on) | VDD=-15V, VGS=-10V, ID=-1A , RG=1Ω | 4.2 | ns | ||
| Turn-on rise time | tr | 5.8 | ns | |||
| Turn-off delay time | td(off) | 75 | ns | |||
| Turn-off fall time | tf | 36 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -9.9 | A | |||
| Pulsed drain-source diode forward current | ISM | -40 | A | |||
2504251720_JSCJ-CJQ4435A_C48586619.pdf
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