Dual N Channel MOSFET JSCJ CJ8820 Offering Excellent RDS ON and Thermal Stability for Power Electronics
Key Attributes
Model Number:
CJ8820
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
8nC
Mfr. Part #:
CJ8820
Package:
SOT-23
Product Description
Product Overview
The CJ8820 is a Dual N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | Ta=25 | 7 | A | ||
| Pulsed Drain Current | IDM | note1 | 25 | A | ||
| Thermal Resistance from Junction to Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | 1/8 from case for 10 s | 260 | |||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A (note 1) | 0.5 | 1.1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =7A (note 1) | 21 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =6.6A (note 1) | 24 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =6A (note 1) | 28 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =5.5A (note 1) | 32 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =2A (note 1) | 50 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =7A (note 1) | 9 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V (note 1) | 1 | V | ||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 650 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 140 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 60 | pF | ||
| SWITCHING PARAMETERS(note 2) | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =6A | 8 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =6A | 2.5 | nC | ||
| Gate-drain charge | Qgd | VDS =10V,VGS =4.5V,ID =6A | 3 | nC | ||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 0.5 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 1 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 12 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 4 | ns | ||
2409272301_JSCJ-CJ8820_C89270.pdf
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