Low gate charge N Channel MOSFET JSCJ CJ2310 suitable for battery protection and switching circuits
Key Attributes
Model Number:
CJ2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-40℃~+150℃
RDS(on):
125mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
CJ2310
Package:
SOT-23
Product Description
Product Overview
The CJ2310 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high power and current handling capability and a lead-free product option. It is available in a surface mount SOT-23 package.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJ2310
- Material: Plastic-Encapsulate
- Package Type: SOT-23
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulsed Drain Current | IDM | (note 1) | 10 | A | ||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RJA | (note 2) | 357 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 2 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3A (note 3) | 105 | m | ||
| VGS =4.5V, ID =3A (note 3) | 125 | m | ||||
| Forward tranconductance | gFS | VDS =15V, ID =2A (note 3) | 1.4 | S | ||
| Diode forward voltage | VSD | IS=3A, VGS = 0V (note 3) | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =30V,VGS =0V,f =1MHz (note 4) | 247 | pF | ||
| Output Capacitance | Coss | VDS =30V,VGS =0V,f =1MHz (note 4) | 34 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =30V,VGS =0V,f =1MHz (note 4) | 19.5 | pF | ||
| Turn-on delay time | td(on) | VGS=10V,VDD=30V, ID=1.5A,RGEN=1 (note 4) | 6 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDD=30V, ID=1.5A,RGEN=1 (note 4) | 15 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDD=30V, ID=1.5A,RGEN=1 (note 4) | 15 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDD=30V, ID=1.5A,RGEN=1 (note 4) | 10 | ns | ||
| Total Gate Charge | Qg | VDS =30V,VGS =4.5V,ID =3A (note 4) | 6 | nC | ||
| Gate-Source Charge | Qgs | VDS =30V,VGS =4.5V,ID =3A (note 4) | 1 | nC | ||
| Gate-Drain Charge | Qg d | VDS =30V,VGS =4.5V,ID =3A (note 4) | 1.3 | nC |
Applications
- Battery Switch
- DC/DC Converter
2410121642_JSCJ-CJ2310_C75882.pdf
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