Load Switching MOSFET JSCJ CJ2305 P Channel Type for Portable Electronics and Power Circuits
Key Attributes
Model Number:
CJ2305
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
90mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
190pF@4V
Number:
1 P-Channel
Input Capacitance(Ciss):
740pF@4V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ2305
Package:
SOT-23
Product Description
Product Overview
The CJ2305 is a P-Channel MOSFET in a SOT-23 package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for enhanced performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJ2305
- Package: SOT-23
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | Ta=25 | -4.1 | A | ||
| Continuous Source-Drain Diode Current | IS | Ta=25 | -0.8 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | 0.35 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -50 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -0.9 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-8V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-3.5A | 30 | 45 | m | |
| VGS =-2.5V, ID =-3A | 40 | 60 | m | |||
| VGS =-1.8V,ID=-2.0A | 60 | 90 | m | |||
| Forward transconductance | gfs | VDS =-5V, ID =-4.1A | 6 | S | ||
| Input capacitance | Ciss | VDS =-4V,VGS =0V,f =1MHz | 740 | pF | ||
| Output capacitance | Coss | VDS =-4V,VGS =0V,f =1MHz | 290 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-4V,VGS =0V,f =1MHz | 190 | pF | ||
| Total gate charge | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 7.8 | 15 | nC | |
| Gate-source charge | Qgs | VDS =-4V,VGS =-4.5V, ID =-4.1A | 4.5 | 9 | nC | |
| Gate-drain charge | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 1.2 | nC | ||
| Gate resistance | Rg | f =1MHz | 1.4 | 7 | ||
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 13 | 20 | ns | |
| Rise time | tr | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 35 | 53 | ns | |
| Turn-off Delay time | td(off) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 32 | 48 | ns | |
| Fall time | tf | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 10 | 20 | ns | |
| Turn-on delay time | td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 5 | 10 | ns | |
| Rise time | tr | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 11 | 17 | ns | |
| Turn-off Delay time | td(off) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 22 | 33 | ns | |
| Fall time | tf | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 16 | 24 | ns | |
| Continuous source-drain diode current | IS | TC=25 | -1.4 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body ciode voltage | VSD | IF=-3.3A | -0.4 | -0.8 | V |
2410121642_JSCJ-CJ2305_C8549.pdf
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