P Channel FET JSCJ CJ3407 Featuring Low Gate Charge and High Reliability for Load Switch Applications
Key Attributes
Model Number:
CJ3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-
RDS(on):
87mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ3407
Package:
SOT-23
Product Description
Product Overview
The CJ3407 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(on) with low gate charge, making it suitable for load switch and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJ3407
- Encapsulation: SOT-23 Plastic
- Marking: 3407
- Origin: China (implied by brand)
- Date: December 2010
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction to Ambient | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.1A | 60 | mΩ | ||
| VGS =-4.5V, ID =-3A | 87 | mΩ | ||||
| Forward transconductance | gFS | VDS =-5V, ID =-4A | 5.5 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1 | - | -3 | V |
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.4 | -1 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 700 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse transfer capacitance | Crss | 75 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 8.6 | ns | ||
| Turn-on rise time | tr | 5.0 | ns | |||
| Turn-off delay time | td(off) | 28.2 | ns | |||
| Turn-off fall time | tf | 13.5 | ns | |||
Notes:
1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
2410121636_JSCJ-CJ3407_C15903.pdf
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