Load Switching P Channel Enhancement Mode Transistor JSCJ CJ3401A with Plastic Encapsulation Package
Key Attributes
Model Number:
CJ3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
400mW
Mfr. Part #:
CJ3401A
Package:
SOT-23
Product Description
Product Overview
The CJ3401A is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications. It offers extremely low RDS(ON) and exceptional on-resistance, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation | PD | 400 | mW | |||
| Thermal Resistance Junction to Ambient | RθJA | (t<5s) | 313 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| On Characteristics | ||||||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.2A | 41 | 60 | mΩ | |
| VGS =-4.5V, ID =-4A | 47 | 70 | mΩ | |||
| VGS =-2.5V,ID=-1A | 61 | 85 | mΩ | |||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.7 | -1.3 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 1050 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz | 127 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 85 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω | 6.5 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω | 3.5 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω | 40 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω | 13 | ns | ||
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
2410121532_JSCJ-CJ3401A_C82360.pdf
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