N Channel Power MOSFET JSCJ CJAB20N03 Designed for Hard Switched High Frequency and UPS Applications
Key Attributes
Model Number:
CJAB20N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Input Capacitance(Ciss):
823pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
13nC
Mfr. Part #:
CJAB20N03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB20N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB20N03
- Package: PDFNWB3.33.3-8L
- Marking: AB20N03
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 8.5 | 12 | m | |
| VGS =4.5V, ID =10A | 12 | 18 | ||||
| Forward transconductance | gFS | VDS =5V, ID =20A | 15 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 823 | pF | ||
| Output capacitance | Coss | 138 | ||||
| Reverse transfer capacitance | Crss | 100 | ||||
| SWITCHING CHARACTERISTICS | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=9A | 13 | nC | ||
| Gate-source charge | Qgs | 3 | ||||
| Gate-drain charge | Qgd | 4.5 | ||||
| Turn-on delay time | td(on) | VDS=15V,VGS=10V, RL=1.8,RGEN=3 | 10 | ns | ||
| Turn-on rise time | tr | 8 | ||||
| Turn-off delay time | td(off) | 30 | ||||
| Turn-off fall time | tf | 5 | ns | |||
| DRAIN-SOURCE DIODE CHARACTERISTICS | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | TJ = 25C, IF = 10A, di/dt = 100A/s | 22 | 35 | ns | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 10A, di/dt = 100A/s | 12 | 20 | nC | |
2410121917_JSCJ-CJAB20N03_C504062.pdf
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