N Channel Power MOSFET JSCJ CJAC70SN15 Designed for General Purpose and Load Switching Applications
Key Attributes
Model Number:
CJAC70SN15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
13.5pF@75V
Number:
1 N-channel
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
5.8nF@75V
Gate Charge(Qg):
-
Mfr. Part #:
CJAC70SN15
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC70SN15 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, making it suitable for load switching and general-purpose applications requiring high density cell design for ultra-low RDS(ON). This lead-free product provides good stability and uniformity with high EAS and excellent package for heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =100V,VGS = 0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 4.0 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =20A | 10 | 12 | m | |
| Total Gate Charge | Qg | VDS =75V,VGS =10V,ID =20A | 45 | nC | ||
| Gate-Source Charge | Qgs | VDS =75V,VGS =10V,ID =20A | 10 | nC | ||
| Gate-Drain Charge | Qg d | VDS =75V,VGS =10V,ID =20A | 5 | nC | ||
| Input Capacitance | Ciss | VDS =75V,VGS =0V,f =100kHz | 3850 | pF | ||
| Output Capacitance | Coss | VDS =75V,VGS =0V,f =100kHz | 252 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =75V,VGS =0V,f =100kHz | 7.5 | pF | ||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=75V, RG=10, ID=20A | 19 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=75V, RG=10, ID=20A | 9 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V, VDS=75V, RG=10, ID=20A | 29 | ns | ||
| Turn-off Fall Time | tf | VGS=10V, VDS=75V, RG=10, ID=20A | 11 | ns | ||
| Body Diode Voltage | VSD | IS=20A,VGS=0V | 1.3 | 2.8 | V | |
| Reverse Recovery Time | Trr | VR=75V, IF=20A, diF/dt=100 A/s | 85 | ns | ||
| Reverse Recovery Charge | Qrr | VR=75V, IF=20A, diF/dt=100 A/s | 165 | nC | ||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 70 | A | |||
| Pulsed Drain Current | IDM | 250 | A | |||
| Power Dissipation | PD | 114 | W | |||
| Single Pulsed Avalanche Energy | EAS | 320 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance Junction to Case | RJC | 1.1 | /W |
2410121918_JSCJ-CJAC70SN15_C5369043.pdf
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