P Channel Enhancement Mode Field Effect Transistor JSCJ CJK2009 for PWM and Load Switching Functions
Key Attributes
Model Number:
CJK2009
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
582pF
Number:
1 P-Channel
Output Capacitance(Coss):
670pF
Input Capacitance(Ciss):
2.6nF
Pd - Power Dissipation:
450mW
Gate Charge(Qg):
-
Mfr. Part #:
CJK2009
Package:
SOT-23-3L
Product Description
Product Overview
The CJK2009 is a P-Channel Enhancement Mode Field Effect Transistor featuring advanced trench MOSFET process technology and ultra low on-resistance with low gate charge. It is designed for applications such as PWM, load switching, and battery charging in cellular handsets.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer)
- Material: Plastic-Encapsulate MOSFETS
- Certifications: None explicitly mentioned
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -9 | A | |||
| Power Dissipation | PD | 450 | mW | |||
| Thermal Resistance Junction to Ambient | RθJA | 278 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-20V,VGS = 0V | -1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| On Characteristics | ||||||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-6A | 25 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-6A | 30 | mΩ | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-6A | 9 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.4 | -1.2 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 2600 | pF | ||
| Output capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 670 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 21 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10Ω | 11 | ns | ||
| Turn-on rise time | tr | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10Ω | 35 | ns | ||
| Turn-off delay time | td(off) | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10Ω | 30 | ns | ||
| Turn-off fall Time | tf | VDD=-10V,VGEN=-4.5V, ID =-1A,Rg=10Ω | 10 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage | VSD | VGS =0V, IS=-2A | -0.75 | -0.6 | V | |
2410010132_JSCJ-CJK2009_C504107.pdf
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