n channel mosfet transistor with low on resistance and plastic encapsulation jscj 2n7000 in to 92 package
Key Attributes
Model Number:
2N7000
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200mA
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
60pF
Pd - Power Dissipation:
625mW
Mfr. Part #:
2N7000
Package:
TO-92
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7000 is a TO-92 package MOSFET with N-Channel configuration. It features a high-density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. This device is rugged, reliable, and offers high saturation current capability.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: TO-92
- Encapsulation: Plastic
- Material: MOSFET
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=10A | 60 | V | ||
| Gate-Threshold Voltage* | V(GS)th | VDS=VGS, ID=1mA | 0.8 | 3 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=15 V | 10 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 1 | A | ||
| On-state Drain Current | ID(ON) | VGS=4.5 V, VDS=10 V | 75 | mA | ||
| Drain-Source On-Resistance* | RDS(on) | VGS=4.5V, ID=75mA | 0.2 | 0.6 | ||
| Drain-Source On-Resistance* | RDS(on) | VGS=10V, ID=500mA | 0.0 | 0.4 | ||
| Forward Trans conductance* | gfs | VDS=10 V, ID=200mA | 100 | mS | ||
| Drain-source on-voltage* | VDS(on) | VGS=10V, ID=500mA | 2.5 | V | ||
| Drain-source on-voltage* | VDS(on) | VGS=4.5V, ID=75mA | 0.45 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 60 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=25 | 10 | ns | ||
| Turn-off Time | td(off) | VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=25 | 10 | ns | ||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 0.2 | A | |||
| Power Dissipation | PD | 0.625 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 200 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 |
2410121532_JSCJ-2N7000_C9114.pdf
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