N Channel Power MOSFET JSMSEMI AO4468 with Low On Resistance and High Continuous Current Capability
Key Attributes
Model Number:
AO4468
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Input Capacitance(Ciss):
770pF@25V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
11.6nC@15V
Mfr. Part #:
AO4468
Package:
SOP-8
Product Description
Product Overview
The AO4468 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This technology is optimized for minimal on-state resistance, making the device ideal for low voltage applications, notebook computer power management, and battery-powered circuits requiring high-side switching. It offers exceptional on-resistance and high continuous current capability.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package: SOP8
- Certifications: Full RoHS compliance
- Testing: 100% UIS Tested, 100% Rg tested
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) | VGS=10V, TJ=150 | 10 | A | ||
| Pulsed Drain Current (IDM) | 40 | A | |||
| Continuous Source Current (IS) | Diode Conduction | 4.0 | A | ||
| Power Dissipation (PD) | TA=25 | 2.8 | W | ||
| Power Dissipation (PD) | TA=70 | 1.8 | W | ||
| Operation Junction Temperature (TJ) | 150 | ||||
| Storage Temperature Range (TSTG) | -55 | +150 | |||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID= 250uA | 30 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID= 250uA | 1.0 | 2.0 | V | |
| Gate Leakage Current (IGSS) | VDS=0V, VGS=±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS= 24V, VGS=0 | 1 | uA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS= 24V, VGS=0, TJ=85 | 30 | uA | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS= 10V, ID= 10 A | 16 | m | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS= 4.5V, ID= 8 A | 20 | m | ||
| Diode Forward Voltage (VSD) | IS= 2.0A, VGS=0V | 0.7 | 1.3 | V | |
| Total Gate Charge (Qg) | VDS= 15V, VGS= 10V, ID= 9.0A | 11.6 | nC | ||
| Gate-Source Charge (Qgs) | 2.5 | nC | |||
| Gate-Drain Charge (Qgd) | 3.9 | nC | |||
| Input Capacitance (Ciss) | VDS= 25V, VGS=0V, f=1MHz | 770 | pF | ||
| Output Capacitance (Coss) | VDS= 25V, VGS=0V, f=1MHz | 110 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS= 25V, VGS=0V, f=1MHz | 90 | pF | ||
| Turn-On Time (Td(on)) | VDS= 15V, RL=15, ID= 1A, VGEN= 10V, RG=6 | 5 | nS | ||
| Turn-On Time (Tr) | 3.5 | nS | |||
| Turn-Off Time (Td(off)) | 19 | nS | |||
| Turn-Off Time (Tf) | 3.5 | nS | |||
| Thermal Resistance Junction to Ambient (RJA) | 62.5 | /W |
Applications
- Power Management
- Portable Equipment
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
2401050928_JSMSEMI-AO4468_C5183837.pdf
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