Power Switching N Channel MOSFET JSCJ CJU60SN08 Featuring Shielded Gate Trench Technology and Low RDS
Key Attributes
Model Number:
CJU60SN08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
1 N-channel
Output Capacitance(Coss):
2.106nF
Pd - Power Dissipation:
92W
Input Capacitance(Ciss):
6.6nF
Gate Charge(Qg):
95nC@10V
Mfr. Part #:
CJU60SN08
Package:
TO-252-2L
Product Description
Product Overview
The CJU60SN08 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU60SN08
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate
- Color: Green molding compound (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 80 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =64V, VGS =0V | 1 | 10 | A | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =10V, ID =20A | 6.3 | m | ||
| Input Capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 3300 | pF | ||
| Output Capacitance | Coss | 1053 | ||||
| Reverse Transfer Capacitance | Crss | 18 | ||||
| Total Gate Charge | Qg | VGS=10V, VDS=20V, ID=5A | 47.8 | nC | ||
| Gate-Source Charge | Qgs | 12.9 | ||||
| Gate-Drain Charge | Qgd | 10.8 | ||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=40A, RL=15,VGS=10V, RG=2.5 | 16 | ns | ||
| Turn-on Rise Time | tr | 33 | ||||
| Turn-off Delay Time | td(off) | 25 | ||||
| Turn-off Fall Time | tf | 16 | ||||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous Drain-Source Diode Forward Current | IS | 60 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 240 | A | |||
| Continuous Drain Current | ID | Ta=25 | 60 | A | ||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulsed Avalanche Energy | EAS | 320 | mJ | |||
| Power Dissipation | PD | Ta=25 | 92 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance Junction to Case | RJC | 1.35 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2409302203_JSCJ-CJU60SN08_C2910352.pdf
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