Low Gate Charge P Channel MOSFET JSMSEMI AO4435 with Advanced Trench Technology and Heat Dissipation
Key Attributes
Model Number:
AO4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
20mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
130pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
1.82nF@15V
Gate Charge(Qg):
-
Mfr. Part #:
AO4435
Package:
SOP-8
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge. It is suitable for a wide range of applications due to its advanced high cell density trench technology for ultra RDS(ON) and excellent package for good heat dissipation. A green device option is available.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AO4435
- Green Device: Available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current-TC=25 | -8 | A | |||
| ID | Continuous Drain Current-TC=100 | -5.1 | A | |||
| ID | Pulsed Drain Current1 | -32 | A | |||
| EAS | Single Pulse Avalanche Energy | --- | mJ | |||
| PD | Power Dissipation(TC=25) | 2.1 | W | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance,Junction to Case | --- | /W | |||
| RJA | Thermal Resistance,Junction to Ambient | 60 | /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-Sourtce Breakdown Voltage | VGS=0V,ID=-250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-30V , VGS=0V , TJ=25 | -1 | μA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0A | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | GATE-Source Threshold Voltage | VGS=VDS, ID=-250μA | -1.0 | -1.6 | -2.5 | V |
| RDS(ON) | Drain-Source On Resistance2 | VGS=-10V,ID=-8A | 16.5 | 20 | mΩ | |
| RDS(ON) | Drain-Source On Resistance2 | VGS=-4.5V,ID=-5A | 25.6 | 32 | mΩ | |
| GFS | Forward Transconductance | VDS=-10V, ID=-3A | 6.8 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | 1250 | 1820 | pF | |
| Coss | Output Capacitance | 160 | 235 | pF | ||
| Crss | Reverse Transfer Capacitance | 90 | 130 | pF | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time2,3 | VDD=-15V , VGS=-10V , RG=6,ID=-1A | 5.8 | 11 | ns | |
| tr | Rise Time2,3 | 18.8 | 36 | ns | ||
| td(off) | Turn-Off Delay Time2,3 | 46.9 | 89 | ns | ||
| tf | Fall Time2,3 | 12.3 | 23 | ns | ||
| Qg | Total Gate Charge2,3 | VDS=-15V , VGS=-4.5V , ID=-5A | 11 | 17 | nC | |
| Qgs | Gate-Source Charge2,3 | 3.4 | 6 | nC | ||
| Qgd | Gate-Drain Miller Charge2,3 | 4.2 | 8 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage2 | VGS=0V,IS=-1A | -1 | V | ||
2401051656_JSMSEMI-AO4435_C5182770.pdf
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