Voltage Controlled Small Signal Switching N Channel MOSFET JSCJ 2N7002T with High Saturation Current
Key Attributes
Model Number:
2N7002T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002T
Package:
SOT-523
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD - 2N7002T MOSFET (N-Channel)
The 2N7002T is an N-Channel MOSFET in a SOT-523 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. Ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand name)
- Material: Plastic-Encapsulated
- Package: SOT-523
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Gate-Source voltage | VGS | 20 | V | |||
| Drain-Source voltage | VDS | 60 | V | |||
| Drain Current | ID | (Ta=25 unless otherwise noted) | 115 | mA | ||
| Power Dissipation | PD | (Ta=25 unless otherwise noted) | 150 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 2.5 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=500mA | 5 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=5 V, ID=50mA | 7 | |||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 80 | mS | ||
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 3.75 | V | ||
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.375 | V | ||
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| SWITCHING TIME | ||||||
| Turn-on Time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 40 | ns | ||
2410121332_JSCJ-2N7002T_C40106.pdf
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