power switching P Channel MOSFET JSCJ CJ3139KA with low gate threshold voltage and lead free design
Key Attributes
Model Number:
CJ3139KA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
700mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
CJ3139KA
Package:
SOT-723
Product Description
Product Overview
This P-Channel MOSFET is a lead-free, surface-mount device designed for efficient load and power switching. It features low RDS(on), operates at low logic level gate drive, and is ideal for ultra-small portable electronics, battery management, and interfacing applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: P-Channel MOSFET
- Package: SOT-723
- Material: Plastic-Encapsulate
- Certifications: Lead Free Product
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±2 | V | |||
| ID | Continuous Drain Current (note 1) | -0.66 | A | |||
| IDM | Pulsed Drain Current (tp=10µs) | -1.2 | A | |||
| PD | Power Dissipation (note 1) | 150 | mW | |||
| RJA | Thermal Resistance from Junction to Ambient (note 1) | 833 | °/W | |||
| TJ | Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature | -55 | +150 | °C | ||
| TL | Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | 260 | °C | |||
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0V, ID =-250µA | -20 | V | ||
| IDSS | Zero gate voltage drain current | VDS =-20V,VGS = 0V | -1 | µA | ||
| IGSS | Gate-body leakage current | VGS =±10V, VDS = 0V | ±20 | µA | ||
| RDS(on) | Drain-source on-resistance (note 2) | VGS =-4.5V, ID =-1A | 430 | 520 | mΩ | |
| VGS =-2.5V, ID =-0.8A | 624 | 700 | mΩ | |||
| VGS =-1.7V, ID =-0.2A | 1 | Ω | ||||
| gFS | Forward transconductance (note 2) | VDS =-10V, ID =-0.54A | 1.2 | S | ||
| VSD | Diode forward voltage | IS=-0.5A, VGS = 0V | -1.2 | V | ||
| Ciss | Input capacitance | VDS =-16V,VGS =0V,f =1MHz | 113 | 170 | pF | |
| Coss | Output capacitance | 15 | 25 | pF | ||
| Crss | Reverse transfer capacitance | 9 | 15 | pF | ||
| td(on) | Turn-on delay time (note 3) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10Ω | 9 | ns | ||
| tr | Turn-on rise time (note 3) | 5.8 | ns | |||
| td(off) | Turn-off delay time (note3) | 32.7 | ns | |||
| tf | Turn-off fall time (note 3) | 20.3 | ns |
2410010101_JSCJ-CJ3139KA_C2910278.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
