Low Gate Charge N Channel MOSFET JSCJ CJU15N10 with High Continuous Drain Current and Thermal Stability
Key Attributes
Model Number:
CJU15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.5nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
CJU15N10
Package:
TO-252-2L
Product Description
Product Overview
The CJU15N10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications. Key features include excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model: CJU15N10
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if applicable, indicated by solid dot)
- Website: www.jscj-elec.com
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 15 | A | ||
| Pulsed Drain Current | IDM | 60 | A | |||
| Single Pulsed Avalanche Energy | EAS | 49 | mJ | |||
| Power Dissipation | PD | Ta=25 | 45 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | 100 | °C/W | |||
| Thermal Resistance Junction to Case | RθJC | 2.78 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 3.0 | V | |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =8A | 70 | mΩ | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f = 1MHz | 773 | pF | ||
| Output capacitance | Coss | 46 | ||||
| Reverse transfer capacitance | Crss | 43 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=10A | 18 | nC | ||
| Gate-source charge | Qgs | 2.8 | ||||
| Gate-drain charge | Qg d | 7.4 | ||||
| Turn-on delay time | td(on) | VDD=25V,RL=5Ω, VGS=10V,RG=1.0Ω | 15 | ns | ||
| Turn-on rise time | tr | 33 | ||||
| Turn-off delay time | td(off) | 41 | ||||
| Turn-off fall time | tf | 1500 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=8A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 15 | A | |||
| Pulsed drain-source diode forward current | ISM | 60 | A | |||
2410121912_JSCJ-CJU15N10_C2910347.pdf
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