Power Dual N Channel TrenchFET Power MOSFET JSCJ CJL2322 for Commercial and Industrial Applications
Key Attributes
Model Number:
CJL2322
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
71pF
Number:
2 N-Channel
Input Capacitance(Ciss):
498pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
CJL2322
Package:
SOT-23-6L
Product Description
Product Overview
The CJL2322 is a Dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for DC/DC converters, load switches in portable devices, and various commercial and industrial applications. The device comes in a surface mount SOT-23-6L package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: S22 (Device code), XX (Date Code)
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Drain Current (note 1) | IDM | A | ||||
| Power Dissipation (note 2) | PD | 1.1 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 114 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =4.5V, ID =3.4A | 22 | 30 | m | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =2.5V, ID =3A | 35 | m | ||
| Forward tranconductance | gFS | VDS =10V, ID =3.4A | 4.5 | S | ||
| Diode forward voltage (note 3) | VSD | IS=2.7A, VGS = 0V | 1.2 | V | ||
| DYNAMIC PARAMETERS (note 4) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 498 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 82 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 71 | pF | ||
| SWITCHING PARAMETERS (note 3,4) | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=3.4A | 29 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=3.4A | 0.59 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID=3.4A | 1.7 | nC | ||
| Gate resistance | Rg | f =1MHz | 6.2 | |||
2410121917_JSCJ-CJL2322_C504193.pdf
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