DFN1006 3L Package N Channel MOSFET JSCJ CJBA7002K Ideal for Portable Applications and Load Switching
Key Attributes
Model Number:
CJBA7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
410mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8Ω@4.5V,0.41A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
5.6pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
80pF
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
2.8nC@10V
Mfr. Part #:
CJBA7002K
Package:
DFN-3L(1x0.6)
Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJBA7002K is an N-Channel MOSFET in a DFN1006-3L package. It features low on-resistance, low threshold voltage, and fast switching speed, with an ESD protected gate. This MOSFET is suitable for load switching, portable applications, and power management functions.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJBA7002K
- Package: DFN1006-3L
- Material: Plastic-Encapsulate
- Origin: China (implied by brand)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 0.41 | A | ||
| Continuous Drain Current | ID | Ta=85 | 0.30 | A | ||
| Pulsed Drain Current | IDM | 1.2 | A | |||
| Power Dissipation | PD | 0.1 | W | |||
| Thermal Resistance | RθJA | Junction to Ambient | 1250 | /W | ||
| Storage Temperature | TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V,VGS = 0V | 100 | nA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.3 | 1.4 | 2.3 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =40mA | 1.2 | 1.5 | Ω | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =35mA | 1.3 | 1.8 | Ω | |
| Forward tranconductance | gfs | VDS = 5V, ID = 40mA | 100 | mS | ||
| Diode forward voltage | VSD | VDS =0V, IS =300mA | 0.84 | 1.1 | V | |
| Input Capacitance | Ciss | VDS =40V,VGS =0V,f =1MHz | 41 | 80 | pF | |
| Output Capacitance | Coss | VDS =40V,VGS =0V,f =1MHz | 3.6 | 5.6 | pF | |
| Reverse Transfer Capacitance | Crss | VDS =40V,VGS =0V,f =1MHz | 2.9 | 5.6 | pF | |
| Gate resistance | Rg | VDS = 0V, VGS = 0V, f = 1MHz | 81 | 200 | Ω | |
| Total Gate Charge | Qg | VDS = 50V, ID = 1A, VGS =4.5V | 0.72 | 1.5 | nC | |
| Total Gate Charge | Qg | VDS = 50V, ID = 1A, VGS =10V | 1.41 | 2.8 | nC | |
| Gate-Source Charge | Qgs | VDS = 50V, ID = 1A, VGS =10V | 0.24 | 0.4 | nC | |
| Gate-Drain Charge | Qgd | VDS = 50V, ID = 1A, VGS =10V | 0.24 | 0.5 | nC | |
| Turn-on delay time | td(on) | VDS=50V,ID=1A, VGS=10V,RG=6Ω | 3.98 | 10 | ns | |
| Turn-on rise time | tr | VDS=50V,ID=1A, VGS=10V,RG=6Ω | 4.95 | 10 | ns | |
| Turn-off delay time | td(off) | VDS=50V,ID=1A, VGS=10V,RG=6Ω | 18.52 | 40 | ns | |
| Turn-off fall time | tf | VDS=50V,ID=1A, VGS=10V,RG=6Ω | 11.94 | 25 | ns |
2410121715_JSCJ-CJBA7002K_C504101.pdf
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