High Current N Channel MOSFET JSMSEMI JSM2050 with Low RDS ON and Enhanced Power Management Features
Key Attributes
Model Number:
JSM2050
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
20A
RDS(on):
8.5mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Pd - Power Dissipation:
51W
Input Capacitance(Ciss):
2nF@10V
Gate Charge(Qg):
27nC
Mfr. Part #:
JSM2050
Package:
PDFN3333-8
Product Description
Product Description
The JSM2050 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This high power and current handling capability makes it suitable for applications such as battery switches, load switches, and power management.
Product Attributes
- Brand: JSMICRO Semiconductor
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | 50 | A | ||
| RDS(ON) | RDS(ON) | VGS=2.5V, ID=15A | 6.5 | 8.5 | m | |
| RDS(ON) | RDS(ON) | VGS=4.5V, ID=25A | 5.2 | 6.5 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | 20 | V | ||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25 | 50 | A | ||
| Continuous Drain Current | ID | TA=70 | 20 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | 145 | A | ||
| Maximum Power Dissipation | PD | 51 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=25A | - | 5.2 | 6.5 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=15A | 6.5 | 8.5 | m | |
| Forward Transconductance | gFS | VDS=10V,ID=25A | 10 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 2000 | - | PF | |
| Output Capacitance | Coss | - | 500 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, F=1.0MHz | - | 200 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V,ID=2A,RL=1,VGS=4.5V,RG=3 | - | 6.4 | - | nS |
| Turn-on Rise Time | tr | VDD=10V,ID=2A,RL=1,VGS=4.5V,RG=3 | - | 17.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=10V,ID=2A,RL=1,VGS=4.5V,RG=3 | - | 29.6 | - | nS |
| Turn-Off Fall Time | tf | VDD=10V,ID=2A,RL=1,VGS=4.5V,RG=3 | - | 16.8 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=25A, VGS=10V | - | 27 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V,ID=25A, VGS=10V | - | 6.5 | - | nC |
| Gate-Drain Charge | Qg d | VDS=10V,ID=25A, VGS=10V | - | 6.4 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A (Note 3) | - | 1.2 | - | V |
| Diode Forward Current | IS | (Note 2) | - | - | 50 | A |
| Reverse Recovery Time | trr | - | 25 | - | nS | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 20A, di/dt = 100A/s(Note3) | - | 24 | - | nC |
2111121930_JSMSEMI-JSM2050_C2874710.pdf
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