DFNWB2X2-6L-U Package MOSFET JSCJ CJMNP517 Suitable for Battery Powered Systems and DC DC Converters
Key Attributes
Model Number:
CJMNP517
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V;900mV
Reverse Transfer Capacitance (Crss@Vds):
137pF@10V;190pF@4V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
630pF@10V;740pF@4V
Pd - Power Dissipation:
-
Gate Charge(Qg):
12nC@10V;9nC@4.5V
Mfr. Part #:
CJMNP517
Package:
UDFN-6(2x2)
Product Description
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS CJMNP517
The CJMNP517 is a DFNWB2X2-6L-U package MOSFET featuring N-Channel and P-Channel configurations. It is designed for power management applications in notebook computers, portable equipment, battery-powered systems, DC/DC converters, and load switches. Key advantages include a super high-density cell design for exceptional on-resistance and maximum DC current capability, resulting in extremely low RDS(ON).
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJMNP517
- Package: DFNWB2X2-6L-U
- Marking: YY=Code 517 = Device code
Technical Specifications
| Parameter | Symbol | N-MOSFET Test Condition | N-MOSFET Value | Unit | P-MOSFET Test Condition | P-MOSFET Value | Unit |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 12 | V | -12 | V | ||
| Gate-Source Voltage | VGS | 12 | V | 12 | V | ||
| Continuous Drain Current (note 1) | ID | 6 | A | -4.1 | A | ||
| Pulsed Drain Current (tp=10us) | IDM | 24 | A | -16.4 | A | ||
| Continuous Source-Drain Diode Current | IS | 6 | A | -4.1 | A | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 12 | V | VGS = 0V, ID =-250A | -12 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =16V,VGS = 0V | 1 | A | VDS =-8V,VGS = 0V | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS =12V, VDS = 0V | 100 | nA | VGS =8V, VDS = 0V | 100 | nA |
| Gate Threshold Voltage (note 2) | VGS(th) | VDS =VGS, ID =250A | 0.5 ~ 1 | V | VDS =VGS, ID =-250A | -0.5 ~ -0.9 | V |
| Drain-Source On-Resistance (note 2) | RDS(on) | VGS =10V, ID =6A | 24 | m | VGS =-4.5V, ID =-3.5A | 45 | m |
| VGS =4.5V, ID =5A | 27 | m | VGS =-2.5V, ID =-3A | 60 | m | ||
| VGS =2.5V, ID =4A | 42 | m | VGS =-1.8V, ID =-2A | 90 | m | ||
| VGS =1.8V, ID =2A | 74 | m | |||||
| Forward Tranconductance (note 2) | gFS | VDS =5V, ID =3.8A | 4 | S | VDS =-5V, ID =-4.1A | 6 | S |
| Diode Forward Voltage | VSD | IS=1A, VGS = 0V | 1 | V | IS=-3.3A, VGS = 0V | -1.2 | V |
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 630 | pF | VDS =-4V,VGS =0V,f =1MHz | 740 | pF |
| Output Capacitance | Coss | 164 | pF | 290 | pF | ||
| Reverse Transfer Capacitance | Crss | 137 | pF | 190 | pF | ||
| Turn-on Delay Time | td(on) | VGS=5V,VDS=10V, RGEN=6RL=1.7 | 5.5 | ns | VGEN=-4.5V,VDD=-4V, ID=-3.3A,RG=1 RL=1.2 | 20 | ns |
| Turn-on Rise Time | tr | 14 | ns | 53 | ns | ||
| Turn-off Delay Time | td(off) | 29 | ns | 48 | ns | ||
| Turn-off Fall Time | tf | 10.2 | ns | 20 | ns | ||
| Total Gate Charge | Qg | VDS=10V,ID=6A, VGS=10V | 12 | nC | VDS=-4V,ID=-4.1A, VGS=-2.5V | 9 | nC |
| Gate-Source Charge | Qgs | 1 | nC | 1.2 | nC | ||
| Gate-Drain Charge | Qg d | 2 | nC | 1.6 | nC | ||
| Thermal Resistance (Junction to Ambient, note 1) | RJA | 167 | /W | ||||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | TSTG | -55~+150 | |||||
| Lead Temperature for Soldering (1/8'' from case for 10 s) | TL | 260 |
2411121115_JSCJ-CJMNP517_C504179.pdf
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