N Channel Power MOSFET JSCJ CJU70N06 Featuring High EAS and Excellent Package for Thermal Management
Key Attributes
Model Number:
CJU70N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
80pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
80W
Input Capacitance(Ciss):
2.15nF@25V
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
CJU70N06
Package:
TO-252-2L
Product Description
Product Overview
The CJU70N06 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Key features include good stability and uniformity with high EAS, excellent package for good heat dissipation, high density cell design for ultra low Rdson, special process technology for high ESD capability, and fully characterized avalanche voltage and current.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU70N06
- Package: TO-252-2L Plastic-Encapsulate MOSFETS
- Marking: U70N06
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 70 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Maximum Power Dissipation | PD | TC=25 | 120 | W | ||
| Single Pulsed Avalanche Energy | EAS | VDD=30V,VGS=10V, L=0.5mH,Rg=25Ω Starting TJ = 25°© | 80 | mJ | ||
| Thermal Resistance from Junction to Ambient | RθJA | 1.56 | °©/W | |||
| Thermal Resistance from Junction to Case | RθJC | 1.0 | °©/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °© | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250uA | 60 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =48V, VGS =0V | 1 | 10 | µA | |
| TJ =125 | 380 | µA | ||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 9.5 | mΩ | ||
| VGS =4.5V, ID =8A | 11 | mΩ | ||||
| Gate resistance | Rg | f =1MHz | 1.0 | Ω | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 2150 | pF | ||
| Output capacitance | Coss | 300 | ||||
| Reverse transfer capacitance | Crss | 150 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 78 | nC | ||
| Gate-source charge | Qgs | 12 | ||||
| Gate-drain charge | Qgd | 18 | ||||
| Turn-on delay time | td(on) | 9.5 | ||||
| Turn-on rise time | tr | VDS=15V,ID=1A, VGS=10V,RG=6Ω | 28 | ns | ||
| Turn-off delay time | td(off) | 45 | ns | |||
| Turn-off fall time | tf | 11 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=1A | 1.0 | 1.7 | V | |
| Continuous drain-source diode forward current | IS | 70 | A | |||
| Pulsed drain-source diode forward current | ISM | 280 | A | |||
2410121853_JSCJ-CJU70N06_C7461919.pdf
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