N Channel MOSFET SOT 23 Package Featuring JSCJ CJ3434 Ideal for Load Switch Battery Applications
Key Attributes
Model Number:
CJ3434
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
245pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
CJ3434
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJ3434 is an N-Channel MOSFET in a SOT-23 package. It features TrenchFET technology for low RDS(ON) and typical ESD protection, making it ideal for load switch and battery applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJ3434
- Package Type: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.6 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =5A | 42 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5A | 44 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =4A | 50 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =4A | 15 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 245 | pF | ||
| Output Capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 35 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 20 | pF | ||
| SWITCHING PARAMETERS | ||||||
| Turn-on delay time | td(on) | VDD=15V,VGS=10V RL=3.75,RGEN=3 | 2 | ns | ||
| Turn-on rise time | tr | VDD=15V,VGS=10V RL=3.75,RGEN=3 | 3.5 | ns | ||
| Turn-off delay time | td(off) | VDD=15V,VGS=10V RL=3.75,RGEN=3 | 22 | ns | ||
| Turn-off fall time | tf | VDD=15V,VGS=10V RL=3.75,RGEN=3 | 3.5 | ns | ||
| Total Gate Charge | Qg | VDS =15V,VGS =10V,ID=4A | 10 | nC | ||
| Gate-Source Charge | Qgs | VDS =15V,VGS =10V,ID=4A | 0.5 | nC | ||
| Gate-Drain Charge | Qg d | VDS =15V,VGS =10V,ID=4A | 1 | nC | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulsed Drain Current | IDM* | 20 | A | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
2410121333_JSCJ-CJ3434_C81603.pdf
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