N Channel Enhancement Mode Transistor JSCJ CJAC2R5SN04C for Battery Management and SMPS Applications
Key Attributes
Model Number:
CJAC2R5SN04C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
RDS(on):
-
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
589pF
Input Capacitance(Ciss):
1.743nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
26.2nC@10V
Mfr. Part #:
CJAC2R5SN04C
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC2R5SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and withstands high energy pulses in avalanche and commutation modes, making it well-suited for high efficiency, fast switching applications such as battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC2R5SN04C
- Package: PDFNWB5x6-8L
- Marking: CJAC2R5SN04C
- Origin: China (implied by manufacturer location and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 130 | A | ||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulsed Avalanche Energy | EAS | 96 | mJ | |||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 1.3 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise specified) | ||||||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =1mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 2.5 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =30A | 2.0 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =30A | 3.0 | 4.5 | m | |
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =100kHz | 1743 | pF | ||
| Output capacitance | Coss | 589 | pF | |||
| Reverse transfer capacitance | Crss | 23 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=65A | 4.6 | nC | ||
| Gate-source charge | Qgs | 5.2 | nC | |||
| Gate-drain charge | Qgd | 12 | nC | |||
| Turn-on delay time | td(on) | VDS=20V, VGS=10V, RL=0.8 , Rg=5.2 | 4.8 | ns | ||
| Turn-on rise time | tr | 11.9 | ns | |||
| Turn-off delay time | td(off) | 26.2 | ns | |||
| Turn-off fall time | tf | 4.4 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=30A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 130 | A | |||
| Pulsed drain-source diode forward current | ISM | 520 | A | |||
| Reverse recovery time | trr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 60 | ns | ||
| Reverse recovery charge | Qrr | 71 | nC | |||
2410121929_JSCJ-CJAC2R5SN04C_C19268977.pdf
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