N Channel MOSFET JSCJ CJAC110N03 Featuring High EAS and Uniform Avalanche Voltage for General Purpose
Key Attributes
Model Number:
CJAC110N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
4.83nF@15V
Pd - Power Dissipation:
120W
Gate Charge(Qg):
42.5nC@4.5V
Mfr. Part #:
CJAC110N03
Package:
PDFNWB-8L-EP(5x6)
Product Description
Product Overview
The CJAC110N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply. Key features include high density cell design for ultra low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent package for good heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Part Number: CJAC110N03
- Material: Plastic-Encapsulated MOSFET
- Marking: CJAC110N03 = Part No., Solid dot = Pin1 indicator, XX = Code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25 | 110 | A | ||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulsed Avalanche Energy | EAS | Starting TJ = 25°C | 800 | mJ | ||
| Power Dissipation | PD | TC=25 | 120 | W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10s) | 260 | °C | ||
| Thermal Resistance from Junction to Ambient | RJA | Mounted on 1 in 2 FR-4 board with 2oz. Copper | 62.5 | °C/W | ||
| Thermal Resistance from Junction to Case | RJC | 1.04 | °C/W | |||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 1.8 | mΩ | ||
| VGS =4.5V, ID =20A | 3.5 | mΩ | ||||
| Forward transconductance | gFS | VDS =10V, ID =2A | 17 | S | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 4830 | pF | ||
| Output capacitance | Coss | 677 | pF | |||
| Reverse transfer capacitance | Crss | 639 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=15V, ID=24A | 42.5 | nC | ||
| Gate-source charge | Qgs | 12.9 | nC | |||
| Gate-drain charge | Qgd | 23.4 | nC | |||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 10 | ns | ||
| Turn-on rise time | tr | 6.5 | ns | |||
| Turn-off delay time | td(off) | 75 | ns | |||
| Turn-off fall time | tf | 18 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.0 | V | ||
| Continuous drain-source diode forward current | IS | 110 | A | |||
| Pulsed drain-source diode forward current | ISM | 440 | A | |||
2411121115_JSCJ-CJAC110N03_C504080.pdf
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