Power Management N Channel Enhancement Mode MOSFET JSMSEMI AO4484 with RoHS Compliant SOP 8 Package
Key Attributes
Model Number:
AO4484
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12.5A
RDS(on):
8.5mΩ@10V;10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.325nF
Pd - Power Dissipation:
2.08W
Output Capacitance(Coss):
142pF
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
AO4484
Package:
SOP-8
Product Description
Product Overview
The AO4484 is a N-Channel Enhancement Mode MOSFET designed for power management applications. It offers high performance with low on-resistance and is available in a reliable and rugged SOP-8 package. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Type: N-Channel Enhancement Mode MOSFET
- Package: SOP-8
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | |||||||
| VDSS | Drain-Source Voltage | 40 | V | ||||
| VGSS | Gate-Source Voltage | ±20 | V | ||||
| TJ | Maximum Junction Temperature | 150 | °C | ||||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |||
| IS | Diode Continuous Forward Current | TA=25°C | 2 | A | |||
| ID | Continuous Drain Current | TA=25°C | 12.5 | A | |||
| TA=70°C | 8.4 | A | |||||
| IDM | Pulsed Drain Current | TA=25°C | 30 | A | |||
| PD | Maximum Power Dissipation | TA=25°C | 2.08 | W | |||
| TA=70°C | 1.3 | W | |||||
| RJA | Thermal Resistance-Junction to Ambient | Steady State | 60 | °C/W | |||
| RJL | Thermal Resistance-Junction to Lead | Steady State | 20 | °C/W | |||
| IAS | Avalanche Current, Single pulse | L=0.1mH | 23 | A | |||
| EAS | Avalanche Energy, Single pulse | L=0.1mH | 26 | mJ | |||
| Electrical Characteristics | |||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250µA | 40 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=32V, VGS=0V, TJ=85°C | - | - | 30 | µA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250µA | 1.5 | 1.8 | 2.5 | V | |
| IGSS | Gate Leakage Current | VGS=±20V, VDS=0V | - | - | ±100 | nA | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=7A | - | 8.5 | 10.5 | mΩ | |
| VGS=4.5V, IDS=5A | - | 10 | 12.5 | ||||
| TJ=125°C, VGS=10V, IDS=7A | - | 12.75 | - | ||||
| Gfs | Forward Transconductance | VDS=5V, IDS=15A | - | 30 | - | S | |
| Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | ISD=10A, VGS=0V | - | 0.9 | 1.1 | V | |
| trr | Reverse Recovery Time | - | 16.2 | - | ns | ||
| ta | Charge Time | - | 9.4 | - | ns | ||
| tb | Discharge Time | - | 6.8 | - | ns | ||
| Qrr | Reverse Recovery Charge | VDD=20V, ISD=10A, dlSD/dt=100A/µs | - | 9.8 | - | nC | |
| Dynamic Characteristics | |||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 0.7 | 1.8 | Ω | ||
| Ciss | Input Capacitance | VGS=0V, VDS=20V, Frequency=1.0MHz | - | 1325 | - | pF | |
| Coss | Output Capacitance | - | 142 | - | |||
| Crss | Reverse Transfer Capacitance | - | 90 | - | |||
| Switching Time | td(ON) | Turn-on Delay Time | VDD=20V, RL=20Ω, IDS=1A, VGEN=10V, RG=1Ω | - | 14.6 | - | ns |
| tr | Turn-on Rise Time | - | 12 | - | |||
| td(OFF) | Turn-off Delay Time | - | 24.6 | - | |||
| tf | Turn-off Fall Time | - | 8 | - | |||
| Gate Charge Characteristics | |||||||
| Qg | Total Gate Charge | VDS=20V, VGS=4.5V, IDS=7A | - | 9.9 | - | nC | |
| VDS=20V, VGS=10V, IDS=7A | - | 21 | 28 | ||||
| Qgth | Threshold Gate Charge | - | 2 | - | |||
| Qgs | Gate-Source Charge | - | 4.9 | - | |||
| Qgd | Gate-Drain Charge | - | 5 | - | |||
2506231742_JSMSEMI-AO4484_C22456142.pdf
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