N Channel Power MOSFET JSCJ CJAB40N03 Ideal for Battery Switches Load Switches and SMPS Applications
Key Attributes
Model Number:
CJAB40N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-40℃~+150℃
RDS(on):
10.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
155pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2nF@25V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
CJAB40N03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB40N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB40N03
- Package Type: Plastic-Encapsulate
- Origin: JIANGSU
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.5 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.5 | 6.5 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 7.2 | 10.5 | m | |
| Forward transconductance | gFS | VDS =10V, ID =20A | 24 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 2000 | pF | ||
| Output capacitance | Coss | 228 | ||||
| Reverse transfer capacitance | Crss | 155 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=25V, VGS=10V, ID=10A | 50 | nC | ||
| Gate-source charge | Qgs | 3 | ||||
| Gate-drain charge | Qg | 18 | ||||
| Turn-on delay time | td(on) | VDS=15V,ID=10A, VGS=10V,RG=3 | 12 | ns | ||
| Turn-on rise time | tr | 36 | ||||
| Turn-off delay time | td(off) | 49 | ||||
| Turn-off fall time | tf | 12 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 40 | A | |||
| Pulsed drain-source diode forward current | ISM | 160 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 40 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 270 | mJ | ||
| Power Dissipation | PD | 3 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
2410121917_JSCJ-CJAB40N03_C504072.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
