N Channel Power MOSFET JSCJ CJU80N03 with Stable Operation and Excellent Avalanche Current Capability
Key Attributes
Model Number:
CJU80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
230pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.33nF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
CJU80N03
Package:
TO-252-2L
Product Description
Product Overview
The CJU80N03 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for high-density cell applications, offering ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability. The excellent package provides good heat dissipation, and special process technology ensures high ESD capability. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU80N03
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current | ID | 80 | A | ||||
| Pulsed Drain Current | IDM | 320 | A | ||||
| Single Pulsed Avalanche Energy | EAS (1) | 306 | mJ | ||||
| Power Dissipation | PD | 1.25 | W | ||||
| Thermal Resistance from Junction to Ambient | RJA | 100 | /W | ||||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature Range | Tstg | -55 | +150 | ||||
| Lead Temperature for Soldering Purposes(1/8 from case for 10s) | TL | 260 | |||||
| Off Characteristics | |||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250µA | 30 | V | |||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | |||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | |||
| On Characteristics (note1) | |||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.5 | 3.0 | V | |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =30A | 5.1 | 6.5 | mΩ | ||
| VGS =5V, ID =24A | 7.1 | 10 | mΩ | ||||
| Forward transconductance | gFS | VDS =5V, ID =24A | 20 | S | |||
| Dynamic Characteristics (note 2) | |||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2330 | pF | |||
| Output capacitance | Coss | 460 | |||||
| Reverse transfer capacitance | Crss | 230 | |||||
| Switching Characteristics (note 2) | |||||||
| Total gate charge | Qg | VDS=10V, VGS=10V, ID=30A | 51 | nC | |||
| Gate-source charge | Qgs | 14 | |||||
| Gate-drain charge | Qg d | 11 | |||||
| Switching Times | VDD=15V,ID=30A, VGS=10V,RG=2.7Ω | td(on) | 20 | ns | |||
| tr | 15 | ||||||
| td(off) | 60 | ||||||
| tf | 10 | ||||||
| Drain-Source Diode Characteristics | |||||||
| Drain-source diode forward voltage(note1) | VSD | VGS =0V, IS=24A | 1.2 | V | |||
| Continuous drain-source diode forward current | IS | 80 | A | ||||
| Pulsed drain-source diode forward current | ISM | 320 | A | ||||
2410121333_JSCJ-CJU80N03_C91688.pdf
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