Low RDS on N Channel MOSFET JSCJ CJ3420 Designed for High Current Load Switching and Power Management
Key Attributes
Model Number:
CJ3420
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-40℃~+150℃
RDS(on):
24mΩ@10V
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
137pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
630pF@10V
Pd - Power Dissipation:
350mW
Mfr. Part #:
CJ3420
Package:
SOT-23
Product Description
Product Overview
The CJ3420 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(on) and is suitable for use as a uni-directional or bi-directional load switch.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: CJ3420
- Package Type: SOT-23
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | Ta=25 | 6 | A | ||
| Pulsed Drain Current | IDM | 25 | A | |||
| Maximum Body-Diode Continuous Current | IS | 2 | A | |||
| Power Dissipation | PD | Ta=25 | 0.35 | W | ||
| Thermal Resistance from Junction to Ambient | RΘJA | 357 | ℃/W | |||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature | Tstg | -55 | +150 | ℃ | ||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Gate-source leakage current | IGSS | VDS =0V, VGS =±12V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS =0V | 1.0 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.7 | 1.0 | V |
| Drain-source on-state resistance | RDS(on) | VGS =10V, ID =6.0A | 19 | 24 | m℉ | |
| Drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =5.0A | 22 | 27 | m℉ | |
| Drain-source on-state resistance | RDS(on) | VGS =2.5V, ID =4.0A | 35 | 42 | m℉ | |
| Drain-source on-state resistance | RDS(on) | VGS =1.8V, ID =2.0A | 74 | m℉ | ||
| Diode forward voltage | VSD | VGS =0V,IS=1A | 0.75 | 1 | V | |
| Forward transconductance | gfs | VDS =5V, ID =3.8A | 4 | S | ||
| DYNAMIC PARAMETERS* | ||||||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 630 | pF | ||
| Output capacitance | Coss | 164 | pF | |||
| Reverse transfer capacitance | Crss | 137 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 1.5 | ℉ | ||
| SWITCHING PARAMETERS* | ||||||
| Turn-on delay time | td(on) | VGS=5V,VDS=10V, RL=1.7℉,RGEN=6℉ | 5.5 | ns | ||
| Rise time | tr | 14 | ns | |||
| Turn-off delay time | td(off) | 29 | ns | |||
| Fall time | tf | 10.2 | ns | |||
2410121333_JSCJ-CJ3420_C81780.pdf
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