NPN transistor JTD JTDSS8050 featuring maximum emitter base voltage 5 volts and low cut off current

Name: NPN transistor JTD JTDSS8050 featuring maximum emitter base voltage 5 volts and low cut off current
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: JTDSS8050
Availability: InStock

Key Attributes

Model Number: JTDSS8050

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

250mW

Transition Frequency(fT):

100MHz

Type:

NPN

Current - Collector(Ic):

1.5A

Collector - Emitter Voltage VCEO:

25V

Operating Temperature:

-55℃~+150℃

Mfr. Part #:

JTDSS8050

Package:

SOT-23

Product Description

SS8050 TRANSISTOR (NPN)

The SS8050 is an NPN transistor, complementary to the SS8550. It is designed for general-purpose applications.

Product Attributes

Marking: Y1
Package: SOT-23
Manufacturer: SHENZHEN JTD ELECTRONICS CO.,LTD
Website: www.szjtdsemi.com

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0		40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0		25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0		5	V
Collector cut-off current	ICBO	VCB=40V, IE=0		0.1	A
Collector cut-off current	ICEO	VCE=20V, IE=0		0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	120	400
DC current gain	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA		0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA		1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz		15	pF
Collector-Base Voltage	VCBO			40	V
Collector-Emitter Voltage	VCEO			25	V
Emitter-Base Voltage	VEBO			5	V
Collector Current	IC			1.5	A
Collector Power Dissipation	PC			250	mW
Thermal Resistance From Junction To Ambient	RJA			500	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55	+150

hFE(1) Classification

Rank	Range
L	120-200
H	200-350
J	300-400

SOT-23 Pinout

1. BASE
2. EMITTER
3. COLLECTOR

SOT-23 Dimensions

Symbol	Dimensions In Inches	Dimensions In Millimeters
A	0.900-1.150	0.035-0.045
A1	0.000-0.100	0.000-0.004
A2	0.900-1.050	0.035-0.041
b	0.300-0.500	0.012-0.020
c	0.080-0.150	0.003-0.006
D	2.800-3.000	0.110-0.118
E	1.200-1.400	0.047-0.055
E1	2.250-2.550	0.089-0.100
e
e1	1.800-2.000	0.071-0.079
L
L1	0.300-0.500	0.012-0.020
V	0-8	0-8
REF	0.550 TYP	0.022 TYP
	0.950 TYP	0.037 TYP

NOTICE: JTD reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. JTD does not assume any liability arising out of the application or use of any product described herein.

2504101957_JTD-JTDSS8050_C42443484.pdf

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NPN transistor JTD JTDSS8050 featuring maximum emitter base voltage 5 volts and low cut off current