PNP Bipolar Junction Transistor JTD JTDSS8550W Suitable for High Collector Current Electronic Circuits
Key Attributes
Model Number:
JTDSS8550W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDSS8550W
Package:
SOT-323
Product Description
Product Overview
The SS8550W is a PNP bipolar junction transistor (BJT) designed for high collector current applications. It serves as a complementary component to the SS8050W transistor. This device is suitable for various electronic circuits requiring a robust PNP transistor with good current handling capabilities.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Package Type: SOT-323
- Material: Plastic-Encapsulate Transistors
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -1.5 | A | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF |
2504101957_JTD-JTDSS8550W_C42443450.pdf
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