High Reliability Power MOSFET JSCJ CJU07N06 Featuring Low RDS ON and Fast Switching Characteristics
Key Attributes
Model Number:
CJU07N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
RDS(on):
88mΩ@4.5V,3A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20.2pF
Number:
1 N-channel
Output Capacitance(Coss):
22.6pF
Pd - Power Dissipation:
15W
Input Capacitance(Ciss):
308pF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
CJU07N06
Package:
TO-252-2L
Product Description
Product Overview
The CJU07N06 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology and design, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications. Key features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer location)
- Material: Plastic-Encapsulate MOSFETS
- Color: Normal device (Green molding compound device indicated by solid dot)
- Certifications: Not specified in the provided text.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =48V, VGS =0V | 1.0 | 100 | A | |
| Gate-body leakage current | IGSS | VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.0 | 2.5 | V | |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =7A | 77 | m | ||
| VGS =4.5V, ID =3A | 88 | m | ||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =30V,VGS =0V, f =1MHz | 308 | pF | ||
| Output capacitance | Coss | 22.6 | ||||
| Reverse transfer capacitance | Crss | 20.2 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=30V, ID=3A | 9.2 | nC | ||
| Gate-source charge | Qgs | 4.0 | ||||
| Gate-drain charge | Qg | 5.0 | ||||
| Turn-on delay time | td(on) | VDD=30V,ID=1.5A, VGS=10V,RG=1 | 14 | ns | ||
| Turn-on rise time | tr | 12 | ||||
| Turn-off delay time | td(off) | 30 | ||||
| Turn-off fall time | tf | 20 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=7A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 7.0 | A | |||
| Pulsed drain-source diode forward current | ISM | 28 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 7.0 | A | ||
| Pulsed Drain Current | IDM | 28 | A | |||
| Single Pulsed Avalanche Energy | EAS | 18 | mJ | |||
| Power Dissipation | PD | Ta=25 | 15 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance Junction to Case | RJC | 8.3 | /W | |||
| Operation Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2409301804_JSCJ-CJU07N06_C19269080.pdf
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