Surface Mount N Channel MOSFET JSCJ CJ3144KW Low On Resistance Ideal for Portable Electronics
Key Attributes
Model Number:
CJ3144KW
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
600mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@4V;600mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
44pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
1.2nC@4.5V
Mfr. Part #:
CJ3144KW
Package:
SOT-323
Product Description
Product Overview
The CJ3144KW is a surface-mount N-channel MOSFET designed for efficient switching applications. It offers low on-resistance (RDS(on)) and is optimized for low logic-level gate drive, making it suitable for ultra-small portable electronics, battery management, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Package: SOT-323
- Material: Plastic-Encapsulate
- Color: Green molding compound device (indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 0.6 | A | |||
| Power Dissipation | PD | 0.2 | W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Electrical Characteristics (Ta = 25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 3 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 1.0 | 1.5 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.6A | 320 | 500 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =0.3A | 410 | 600 | m | |
| Forward tranconductance | gFS | VDS =5V, ID =0.5A | 0.1 | S | ||
| Dynamic characteristics (4) | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 44 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHz | 8 | pF | ||
| Total gate charge | Qg | VDS =15V,VGS =4.5V,ID =0.8A | 1.2 | nC | ||
| Gate-source charge | Qgs | VDS =15V,VGS =4.5V,ID =0.8A | 0.28 | nC | ||
| Gate-drain charge | Qg d | VDS =15V,VGS =4.5V,ID =0.8A | 0.3 | nC | ||
| Switching Characteristics (4) | ||||||
| Turn-on delay time | td(on) | VDS=15V,ID=0.7A, VGS=4.5V,RG=51 | 5.0 | ns | ||
| Turn-on rise time | tr | VDS=15V,ID=0.7A, VGS=4.5V,RG=51 | 8.2 | ns | ||
| Turn-off delay time | td(off) | VDS=15V,ID=0.7A, VGS=4.5V,RG=51 | 23 | ns | ||
| Turn-off fall time | tf | VDS=15V,ID=0.7A, VGS=4.5V,RG=51 | 41 | ns | ||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | VSD | IS=0.6A, VGS = 0V | 0.87 | 1.2 | V | |
2505201506_JSCJ-CJ3144KW_C504055.pdf
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