86--136 6733 2386
quality Durable JSCJ CR612B 2.5-6MA Silicon Controlled Rectifier Featuring Mesa Glass Passivated Technology factory
quality Durable JSCJ CR612B 2.5-6MA Silicon Controlled Rectifier Featuring Mesa Glass Passivated Technology factory

Durable JSCJ CR612B 2.5-6MA Silicon Controlled Rectifier Featuring Mesa Glass Passivated Technology

Key Attributes
Model Number: CR612B 2.5-6MA
Product Custom Attributes
Mfr. Part #:
CR612B 2.5-6MA
Package:
TO-220
Product Description

Product Overview

This product is a standard SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure, mesa glass passivation, and multi-layer metal electrodes. It is designed for applications such as LED controllers, motorcycle voltage regulators, and hair straighteners. The SCR offers a repetitive peak off-state voltage of 600V and an RMS on-state current of 12A.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Part Number: CR612B
  • Internal Code: XXX (as marked)
  • Package Type: TO-220BK
  • Structure: PNPN 4-layer
  • Technology: Mesa Glass Passivated
  • Electrodes: Multi Layers Metal

Technical Specifications

Symbol Parameter Test Condition Value Unit
VDRM/VRRM Repetitive peak off-state voltage Tj=25 600 V
IT(RMS) RMS on-state current TO-220BK(TC110), Fig. 1,2 12 A
IT(AV) Average on-state current TO-220BK(TC110) 8 A
ITSM Non repetitive surge peak on-state current Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 140 A
I2t I2t value tp=10ms 98 A2s
dIT/dt Critical rate of rise of on-state current IG=2*IGT, tr10ns, F=120HZ, Tj=125 50 A/s
IGM Peak gate current tp=20s, Tj=125 4 A
PG(AV) Average gate power Tj=125 1 W
VTM On-state Voltage ITM=24A, Fig. 4 1.6 V
IGT Gate trigger current VD=12V, RL=33, Tj=25, Fig. 6 0.2 mA
VGT Gate trigger voltage IG=1.2IGT, Tj=25 1.0 V
VGD Non-triggering gate voltage VD=VDRM, RL=3.3k, Tj=125 0.2 V
IH Holding current IT=500mA, Tj=25 5 mA
IL Latching current VD=12V, RL=33, Tj=25 6 mA
dVD/dt Critical rate of rise of off-state VD=67%VDRM, Gate OPEN,Tj=125 30 V/s
IDRM/IRRM Repetitive peak off- state current VD=VDRM/VRRM, Tj=25 1 mA
IDRM/IRRM Repetitive peak off- state current VD=VDRM/VRRM, Tj=125 1 mA
TSTG Storage temperature -40~+150
Tj Operating junction temperature -40~+125
Rth(j-c) Junction to case (AC) 1.3 /W
Rth(j-a) Junction to ambient 60 /W

2411121117_JSCJ-CR612B-2-5-6MA_C527753.pdf

Related Products
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification factory
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.