SOT 363 packaged N channel MOSFET JSCJ 2N7002KDW for small signal switching and low RDS on applications

Key Attributes
Model Number: 2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@4.5V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002KDW
Package:
SOT-363
Product Description

Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002KDW is a N-channel MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(on), making it suitable for voltage-controlled small signal switching applications. This MOSFET is rugged, reliable, and offers high saturation current capability, with ESD protection.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package: SOT-363
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source voltageVDS60V
Drain CurrentID340mA
Power DissipationPD0.15W
Junction TemperatureTJ150
Storage TemperatureTstg-55150
Thermal Resistance Junction to AmbientRJA833 /W
Gate-Source voltageVGS20V
Drain-Source Breakdown VoltageVDS(BR)DSSVGS = 0V, ID =250A60V
Gate Threshold VoltageVGS(th)VDS =VGS, ID =1mA11.32.5V
Zero Gate Voltage Drain CurrentIDSSVDS =48V,VGS = 0V1A
Gate Source leakage currentIGSSVGS =20V, VDS = 0V10A
Drain-Source On-ResistanceRDS(on)VGS = 4.5V, ID =200mA1.15.3
Drain-Source On-ResistanceRDS(on)VGS =10V,ID =500mA0.95
Diode Forward VoltageVSDVGS=0V, IS=300mA1.5V
Recovered chargeQrVGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s30nC
Input CapacitanceCissVDS =10V,VGS =0V,f =1MHz40pF
Output CapacitanceCossVDS =10V,VGS =0V,f =1MHz30pF
Reverse Transfer CapacitanceCrssVDS =10V,VGS =0V,f =1MHz10pF
Turn-On Delay Timetd(on)VGS=10V,VDD=50V,RG=50, RGS=50, RL=25010ns
Turn-Off Delay Timetd(off)VGS=10V,VDD=50V,RG=50, RGS=50, RL=25015ns
Reverse recovery TimetrrVGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s30ns
Gate-Source Breakdown VoltageBVGSOIgs=1mA (Open Drain)21.530V

2410121855_JSCJ-2N7002KDW_C83502.pdf

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