SOT 363 packaged N channel MOSFET JSCJ 2N7002KDW for small signal switching and low RDS on applications
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002KDW is a N-channel MOSFET in a SOT-363 package. It features a high-density cell design for low RDS(on), making it suitable for voltage-controlled small signal switching applications. This MOSFET is rugged, reliable, and offers high saturation current capability, with ESD protection.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOT-363
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source voltage | VDS | 60 | V | |||
| Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 0.15 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Gate-Source voltage | VGS | 20 | V | |||
| Drain-Source Breakdown Voltage | VDS(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID =200mA | 1.1 | 5.3 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V,ID =500mA | 0.9 | 5 | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | nC | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 15 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V |
2410121855_JSCJ-2N7002KDW_C83502.pdf
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