High Voltage N Channel MOSFET JSCJ CJPF12N65 Suitable for Power Converters and Motor Control Systems
Key Attributes
Model Number:
CJPF12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
850mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
200pF
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
CJPF12N65
Package:
TO-220F-3
Product Description
Product Overview
The CJPF12N65 is an advanced high voltage N-Channel Power MOSFET designed for efficient switching in high-speed applications. It offers high current capability, low on-resistance, and fast switching characteristics, along with specified avalanche energy and a fast-recovery drain-to-source diode. This MOSFET is ideal for power supplies, converters, power motor controls, and bridge circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: PF12N65
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | Ta=25 | 12 | A | ||
| Pulsed Drain Current | IDM | 48 | A | |||
| Single Pulsed Avalanche Energy | EAS | 540 | mJ | |||
| Power Dissipation | PD | TC=25 | 50 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance Junction to Case | RJC | 2.5 | /W | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 650 | V | ||
| Zero gate voltage drain current | IDSS | VDS =650V, VGS =0V | 10 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±30V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 2 | 3.5 | 4 | V |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =6A | 0.7 | 0.85 | Ω | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 1800 | pF | ||
| Output capacitance | Coss | 200 | pF | |||
| Reverse transfer capacitance | Crss | 25 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS =520V,VGS =10V,ID =12A | 42 | 54 | nC | |
| Gate-source charge | Qgs | 8.6 | nC | |||
| Gate-drain charge | Qgd | 21 | nC | |||
| Turn-on delay time | td(on) | VDD=325V, VGS=10V, RG=25Ω, ID =12A | 30 | ns | ||
| Turn-on rise time | tr | 90 | ns | |||
| Turn-off delay time | td(off) | 160 | ns | |||
| Turn-off fall time | tf | 90 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS = 0V, IS =12A | 1.4 | V | ||
| Maximum continuous drain-source diode forward current | IS | 12 | A | |||
| Maximum pulsed drain-source diode forward current | ISM | 48 | A | |||
2410121912_JSCJ-CJPF12N65_C2910320.pdf
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