Durable silicon controlled rectifier JSCJ CS030E 30-60uA sensitive gate SCR for pulse igniters and LED controllers
Key Attributes
Model Number:
CS030E 30-60uA
Product Custom Attributes
Mfr. Part #:
CS030E 30-60uA
Package:
TO-126
Product Description
Product Overview
The CS030E is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure with mesa glass passivated technology and multi-layers metal electrodes. Designed for sensitive gate triggering, it is ideal for applications such as pulse igniters, LED controllers, and coffee machines. Its robust construction ensures reliable performance in demanding environments.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: TO-126K Plastic-Encapsulate Thyristors
- Marking: CS030E (Part Number), XXX (Internal Code)
Technical Specifications
| Symbol | Parameter | Test Condition | Value | Unit | Typical | Max | Min |
| ABSOLUTE RATINGS | VDRM/VRRM Repetitive peak off-state voltage | Tj=25 | 600 | V | |||
| IT(RMS) RMS on-state current | TO-126K(TC80) | 3 | A | ||||
| ITSM Non repetitive surge peak on-state current | Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 | 20 | A | ||||
| I2t I2t value | tp=10ms | 2 | As | ||||
| dIT/dt Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=110 | 50 | A/s | ||||
| TSTG Storage temperature | -40~+150 | ||||||
| MAIN CHARACTERISTICS | IT(AV) Average on-state current | TO-126K(TC80) | 2 | A | |||
| VDRM/ VRRM Repetitive peak off-state voltage | Tj=25 | 600 | V | ||||
| IGM Peak gate current | tp=20s, Tj=110 | 0.2 | A | ||||
| PG(AV) Average gate power | Tj=110 | 0.1 | W | ||||
| Tj Operating junction temperature | -40~+110 | ||||||
| ELECTRICAL CHARACTERISTICS | IGT Gate trigger current | VD=12V, RL =100, RGK =1k Fig. 6 | A | 10 | 200 | ||
| VGT Gate trigger voltage | ITM=4A , Fig. 4 | V | 1.5 | ||||
| VGD Non-triggering gate voltage | VD=1/2VDRM, RGK=1k,Tj=110 | V | 100 | ||||
| IH Holding current | VD=24V, Tj=25, Fig. 6 | mA | 3 | ||||
| IL Latching current | VD=6V, RL =100, RGK =1k Fig. 6 | mA | 4 | ||||
| VTM On-state Voltage | ITM=4A, RGK=1k, Tj=110 | V | 1.2 | ||||
| THERMAL RESISTANCES | Rth (j-c) Junction to case (AC) | 7.2 | /W | ||||
| Rth (j-a) Junction to ambient | 100 | /W | |||||
| Repetitive peak off- state current | IDRM / IRRM | VD=VDRM/VRRM, Tj=25 | A | 200 | |||
| Repetitive peak off- state current | IDRM / IRRM | VD=VDRM/VRRM,Tj=110 | A | 3 | |||
| Critical rate of rise of off-state | dVD/dt | VD=67%VDRM, Tj=110 | V/s | 3 |
2411121117_JSCJ-CS030E-30-60uA_C527734.pdf
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