Low On Resistance N Channel MOSFET JSCJ CJK1508 with Maximum Power Dissipation 0.5W and High Current
Key Attributes
Model Number:
CJK1508
Product Custom Attributes
Drain To Source Voltage:
15V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.3mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
17.9nC
Mfr. Part #:
CJK1508
Package:
SOT-23-3L
Product Description
Product Overview
The CJK1508 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed for load/power switching and interfacing applications. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, along with ESD protected gate.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-3L
- Material: Plastic-Encapsulate
- Color: Normal device (Solid dot = Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 15 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulsed Drain Current | IDM | * | 30 | A | ||
| Power Dissipation | PD | 0.500 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 249 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes (1/8 from case for 10 s) | TL | 260 | ||||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 15 | V | ||
| Zero gate voltage drain current | IDSS | VDS =12V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS = 10V, VDS = 0V | 5 | A | ||
| Gate threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =250A | 0.5 | 1 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =10V, ID =3A | 7.7 | 9.5 | m | |
| VGS =4.5V, ID =3A | 8.6 | 10.5 | m | |||
| VGS =3.8V, ID =3A | 9.1 | 11.5 | m | |||
| VGS =2.5V, ID =3A | 11.3 | 14.5 | m | |||
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =3A | 20 | S | ||
| Diode forward voltage (note 1) | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Dynamic Parameters (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1800 | pF | ||
| Output Capacitance | Coss | 230 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| Switching Parameters (note 2) | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3A | 17.9 | nC | ||
| Gate-source charge | Qgs | 1.5 | nC | |||
| Gate-drain charge | Qgd | 4.7 | nC | |||
| Turn-on delay time | td(on) | VGS=10V,VDS=10V, RL=1.2 ,RGEN=3 | 2.5 | ns | ||
| Turn-on rise time | tr | 7.2 | ns | |||
| Turn-off delay time | td(off) | 49 | ns | |||
| Turn-off fall time | tf | 10.8 | ns | |||
2410010132_JSCJ-CJK1508_C504106.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
