N Channel MOSFET JSCJ CJ8810 Featuring Low Rds on and High Pulsed Drain Current for Portable Devices
Key Attributes
Model Number:
CJ8810
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
15nC
Mfr. Part #:
CJ8810
Package:
SOT-23
Product Description
Product Overview
The CJ8810 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low Rds(on), ESD protected gate, and is suitable for load/power switching and small portable electronics. This device offers a V(BR)DSS of 20V and a continuous drain current of 7A.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJ8810
- Package: SOT-23
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | Ta=25 | 7 | A | ||
| Pulsed Drain Current | IDM | * | 30 | A | ||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | |||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =7A | 26 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =6.6A | 27 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =6A | 30 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =5.5A | 33 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =5A | 45 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1150 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 185 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 145 | pF | ||
| TOTAL GATE CHARGE | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 15 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 0.8 | nC | ||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 3.2 | nC | ||
| SWITCHING PARAMETERS | ||||||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 6 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 13 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 52 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 16 | ns | ||
2410121656_JSCJ-CJ8810_C81359.pdf
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