High voltage N Channel MOSFET JSCJ CJPF04N65 optimized for pulsed avalanche energy and fast switching
Key Attributes
Model Number:
CJPF04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
760pF
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
CJPF04N65
Package:
TO-220F
Product Description
Product Overview
The CJPF04N65 is an advanced high voltage N-Channel Power MOSFET designed for high energy handling in avalanche mode and efficient switching. It features a fast recovery time for its drain-to-source diode. This MOSFET is ideal for high voltage, high speed switching applications including power supplies, converters, power motor controls, and bridge circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: PF04N65
- Packaging: TO-220F Plastic-Encapsulate
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||||
| Drain-Source Voltage | VDS | 650 | V | |||||
| Gate-Source Voltage | VGS | ±30 | V | |||||
| Continuous Drain Current | ID | 4.0 | A | |||||
| Pulsed Drain Current | IDM | 16 | A | |||||
| Single Pulsed Avalanche Energy | EAS | (note1) | 280 | mJ | ||||
| Power Dissipation | PD | 2 | W | |||||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | ℃/W | |||||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | ~ | +150 | ℃ | |||
| Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds | TL | 260 | ℃ | |||||
| Off Characteristics | ||||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 650 | V | ||||
| Drain-source diode forward voltage | VSD | VGS = 0V, IS =4.0A (note2) | 1.5 | V | ||||
| Zero gate voltage drain current | IDSS | VDS =600V, VGS =0V | 25 | µA | ||||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±30V (note2) | ±100 | nA | ||||
| On Characteristics (note2) | ||||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 2.0 | 3.5 | 4.0 | V | ||
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =2.0A | 2.5 | 3.0 | Ω | |||
| Dynamic Characteristics (note 3) | ||||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 760 | 180 | 20 | pF | ||
| Output capacitance | Coss | |||||||
| Reverse transfer capacitance | Crss | |||||||
| Switching Characteristics (note 3) | ||||||||
| Total gate charge | Qg | VDS =480V,VGS =10V,ID =4.0A | 5.0 | 2.7 | 2.0 | nC | ||
| Gate-source charge | Qgs | |||||||
| Gate-drain charge | Qgd | |||||||
| Turn-on delay time | td(on) | |||||||
| Turn-on rise time | tr | VDD=300V, VGS=10V, RG=9.1Ω, ID =4.0A | 20 | 10 | 40 | 20 | ns | |
| Turn-off delay time | td(off) | |||||||
| Turn-off fall time | tf | |||||||
2410121912_JSCJ-CJPF04N65_C2910334.pdf
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