Surface Mount N Channel MOSFET with Low RDS on and ESD Protection JSCJ CJBA3541K in DFN1006 3L Package
Key Attributes
Model Number:
CJBA3541K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
600mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
CJBA3541K
Package:
X1-DFN1006-3
Product Description
Product Overview
The CJBA3541K is an N-Channel MOSFET in a DFN1006-3L surface mount package. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This lead-free product is designed for load/power switching, interfacing switching, battery management in ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJBA3541K
- Package: DFN1006-3L
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Typical Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (note 1) | ID | 0.6 | A | |||
| Pulsed Drain Current (tp=10us) | IDM | 1.8 | A | |||
| Power Dissipation (note 1) | PD | 100 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | RJA | 1250 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | 150 | ||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | A | ||
| Gate threshold voltage(2) | VGS(th) | VDS =VGS, ID =250A | 0.8 | 1.0 | 1.5 | V |
| Drain-source on-resistance(2) | RDS(on) | VGS =4.5V, ID =600mA | 320 | 500 | m | |
| Drain-source on-resistance(2) | RDS(on) | VGS =2.5V, ID =300mA | 410 | 600 | m | |
| Forward tranconductance | gFS | VDS =10V, ID =150mA | 150 | mS | ||
| Dynamic characteristics(4) | ||||||
| Input Capacitance | Ciss | VDS=16V,VGS=0V,f=1MHz | 44 | 120 | pF | |
| Output Capacitance | Coss | 15 | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | 8 | 15 | pF | ||
| Switching Characteristics(4) | ||||||
| Turn-on delay time(3) | td(on) | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 5.0 | ns | ||
| Turn-on rise time(3) | tr | 8.2 | ns | |||
| Turn-off delay time(3) | td(off) | 23 | ns | |||
| Turn-off fall time(3) | tf | 41 | ns | |||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage(3) | VDS | IS=0.15A, VGS = 0V | 1.2 | V | ||
2410121848_JSCJ-CJBA3541K_C504100.pdf
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