Power MOSFET JSCJ CJQ10SN15S Featuring Shielded Gate Trench Technology for Load Switch Applications
Key Attributes
Model Number:
CJQ10SN15S
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
RDS(on):
52mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
410pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
1.15nF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
CJQ10SN15S
Package:
SOP-8
Product Description
Product Overview
The CJQ10SN15S is an N-Channel Power MOSFET utilizing shielded gate trench technology and a low resistance package for extremely low RDS(ON). It is ideal for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: Q10SN15S
- Molding Compound: Green (indicated by solid dot)
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Drain-Source Voltage | VDS | 150 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current | ID | 10 | A | ||||
| Pulsed Drain Current | IDM | 40 | A | ||||
| Power Dissipation | PD | Tc=25 | 3.0 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 41.7 | /W | ||||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | ||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250A | 150 | V | |||
| Zero gate voltage drain current | IDSS | VDS =120V, VGS =0V | 1.0 | A | |||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | |||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 3.0 | 4.0 | V | |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 40 | m | |||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 1150 | 410 | 40 | pF | |
| Output capacitance | Coss | ||||||
| Reverse transfer capacitance | Crss | ||||||
| Total gate charge | Qg | VGS=10V, VDS=80V, ID=7A | 20 | 4.7 | 4.9 | nC | |
| Gate-source charge | Qgs | ||||||
| Gate-drain charge | Qg d | ||||||
| Turn-on delay time | td(on) | VDD=30V,RL=2.3, VGS=10V, RG=10 | 41 | 33 | 93 | ns | |
| Turn-on rise time | tr | ||||||
| Turn-off delay time | td(off) | ||||||
| Turn-off fall time | tf | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | |||
| Continuous drain-source diode forward current | IS | 10 | A | ||||
| Pulsed drain-source diode forward current | ISM | 40 | A |
2410121706_JSCJ-CJQ10SN15S_C19269165.pdf
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