Durable P Channel MOSFET JSCJ CJ4459 Designed for Load Switch and Battery Protection Applications
Key Attributes
Model Number:
CJ4459
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
46mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
90pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
625pF@15V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
CJ4459
Package:
SOT-23
Product Description
Product Overview
The CJ4459 is a P-Channel MOSFET designed with advanced trench technology and a low-resistance package, offering extremely low RDS(ON). It is ideal for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: 4459
- Molding Compound: Green (if solid dot present)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -5.0 | A | |||
| Pulsed Drain Current | IDM | (note 1) | -30 | A | ||
| Power Dissipation | PD | (note 2) | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | (t ≤10s) (note 2) | 357 | °C/W | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | 150 | °C | ||
| STATIC PARAMETERS (Ta=25 °C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V,VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA (note 3) | -1.4 | -2.0 | -2.4 | V |
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-5A (note 3) | 35 | 46 | mΩ | |
| VGS =-4.5V, ID =-5A (note 3) | 55 | 72 | mΩ | |||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A (note 3) | 14 | S | ||
| Diode forward voltage | VSD | IS=-1A, VGS = 0V (note 3) | -1 | V | ||
| DYNAMIC PARAMETERS (note 4) | ||||||
| Input Capacitance | Ciss | 415 | 625 | pF | ||
| Output Capacitance | Coss | 70 | 130 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 40 | 90 | pF | |
| SWITCHING PARAMETERS (note 4) | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=2.5Ω,RGEN=3Ω | 7.5 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=2.5Ω,RGEN=3Ω | 5.5 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=2.5Ω,RGEN=3Ω | 19 | ns | ||
| Turn-off fall time | tf | VGS=-10V,VDS=-15V, RL=2.5Ω,RGEN=3Ω | 7 | ns | ||
| Total Gate Charge | Qg | (10V) | 7.4 | 11 | nC | |
| Gate-Source Charge | Qgs | (10V) | 1.3 | 1.9 | nC | |
| Gate-Drain Charge | Qgd | VDS =-15V,VGS =-10V,ID=-5A | 1.3 | 3.1 | nC | |
2005141002_JSCJ-CJ4459_C504056.pdf
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