load switching with JSCJ CJ2302 N Channel TrenchFET Power MOSFET and continuous drain current of 2.1A
Key Attributes
Model Number:
CJ2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
RDS(on):
115mΩ@2.5V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
CJ2302
Package:
SOT-23
Product Description
Product Overview
The CJ2302 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management with a 20V drain-source voltage and low on-resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
- Molding Compound: Green molding compound device
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||||
| Gate-Source Voltage | VGS | ±8 | V | ||||
| Continuous Drain Current | ID | 2.1 | A | ||||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.6 | A | ||||
| Power Dissipation | PD | 0.4 | W | ||||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 312.5 | °C/W | ||||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | °C | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10µA | 20 | V | |||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.65 | 0.95 | 1.2 | V | |
| Gate-body leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | |||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | µA | |||
| Drain-source on-resistance | rDS(on) | VGS =4.5V, ID =3.6A | 0.035 | 0.060 | Ω | ||
| VGS =2.5V, ID =3.1A | 0.045 | 0.115 | |||||
| Forward transconductance | gfs | VDS =5V, ID =3.6A | 8 | S | |||
| Diode forward voltage | VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =3.6A | 0.65 | ||||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =3.6A | 1.5 | ||||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f=1MHz | 300 | pF | |||
| Output capacitance | Coss | VDS =10V,VGS =0V,f=1MHz | 120 | ||||
| Reverse transfer capacitance | Crss | VDS =10V,VGS =0V,f=1MHz | 80 | ||||
| Switching | Turn-on delay time | td(on) | VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 7 | 15 | ns | |
| Turn-off delay time | td(off) | VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 16 | 60 | |||
| Rise time | tr | VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 55 | 80 | ns | ||
| Fall time | tf | VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 10 | 25 | ns | ||
2410121912_JSCJ-CJ2302_C2910175.pdf
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