P Channel MOSFET power switching device JSCJ CJ2321A with TrenchFET technology and low on resistance
Key Attributes
Model Number:
CJ2321A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-50℃~+150℃
RDS(on):
120mΩ@1.8V,2.3A
Gate Threshold Voltage (Vgs(th)):
1V@0.25mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
715pF
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
CJ2321A
Package:
SOT-23
Product Description
Product Overview
The CJ2321A is a P-Channel MOSFET designed for power switching applications. It features TrenchFET technology for improved performance and low on-resistance. This MOSFET is suitable for use as a PA switch and load switch.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: S21A
- Molding Compound: Green
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-10A | -20 | V | ||
| Gate-Source Leakage | IGSS | VDS =0V, VGS =12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-16V, VGS =0V | -1.0 | A | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1.0 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-3.3A | 0.057 | |||
| VGS =-2.5V, ID =-2.8A | 0.076 | |||||
| VGS =-1.8V, ID =-2.3A | 0.120 | |||||
| Forward Transconductance | gfs | VDS =-5V, ID =-3.3A | 3 | S | ||
| Forward Diode Voltage | VSD | VGS =0V,IS=-1.6A | -1.2 | V | ||
| Capacitance | Ciss, Coss, Crss | VDS =-6V,VGS =0V,f =1MHz | 715 | pF | ||
| 170 | ||||||
| 120 | ||||||
| Charge | Qg, Qgs, Qgd | VDS =-6V,VGS =-4.5V,ID=-3.3A | 13 | nc | ||
| 1.2 | ||||||
| 2.2 | ||||||
| Switching Time | td(on), tr, td(off), tf | VGEN=-4.5V,VDD=-6V, ID =-1.0A,RG=6, RL=6 | 25 | ns | ||
| 55 | ||||||
| 90 | ||||||
| 60 |
2410121908_JSCJ-CJ2321A_C19269081.pdf
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