MiniMELF package diode JUXING LL4148 fast switching silicon epitaxial planar for electronic circuits
Key Attributes
Model Number:
LL4148
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
LL4148
Package:
LL-34
Product Description
Product Overview
The LL4148 is a fast switching diode utilizing silicon epitaxial planar technology. Encased in a MiniMELF package, it is specifically designed for automatic surface mounting applications. Its fast switching characteristics make it ideal for various electronic circuits requiring efficient signal processing.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. | Notes |
| Absolute Maximum Ratings | Peak Reverse Voltage | 100 | V | |||
| Reverse Voltage | 75 | V | ||||
| Average Rectified Forward Current | 200 | mA | ||||
| Non-repetitive Peak Forward Surge Current (t=1s) | IFSM | 0.5 | A | |||
| Non-repetitive Peak Forward Surge Current (t=1ms) | IFSM | 1 | A | |||
| Non-repetitive Peak Forward Surge Current (t=1s) | IFSM | 4 | A | |||
| Power Dissipation | Ptot | 500 | mW | 1) Valid provided that electrodes are kept at ambient temperature. | ||
| Junction Temperature | Tj | 175 | C | |||
| Storage Temperature Range | Tstg | -65 to +175 | C | |||
| Characteristics | Forward Voltage at IF = 10 mA | VF | 1 | V | ||
| Leakage Current at VR = 20 V | IR | 25 | nA | |||
| Leakage Current at VR = 75 V | IR | 5 | A | |||
| Leakage Current at VR = 20 V, Tj = 150 C | IR | 50 | A | |||
| Reverse Breakdown Voltage (tested with 100 A Pulses) | V(BR)R | 100 | V | 100 | ||
| Capacitance at VR = 0, f = 1 MHz | Ctot | 4 | pF | |||
| Voltage Rise when Switching ON (tested with 50 mA Forward Pulses, tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz) | Vfr | 2.5 | V | |||
| Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 | trr | 4 | ns | |||
| Thermal Resistance Junction to Ambient Air | RthA | 0.35 | 1) Valid provided that electrodes are kept at ambient temperature. | |||
| Rectification Efficiency at f = 100 MHz, VRF = 2 V | V | 0.45 | 0.45 |
2410121618_JUXING-LL4148_C3011166.pdf
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