Power MOSFET JSCJ CJBM3020 N Channel with Ultra Low RDS ON and Excellent Heat Dissipation Package
Key Attributes
Model Number:
CJBM3020
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
100pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
CJBM3020
Package:
DFNWB-8-EP(3x3)
Product Description
Product Overview
The CJBM3020 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability. This MOSFET is suitable for a wide variety of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supply.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJBM3020
- Package: DFNWB33-8L-BE
- Marking: BM3020
- Pin1 Indicator: Solid dot
- Date Code: XX
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.5 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 8.5 | 14 | m | |
| VGS =4.5V, ID =10A | 11.5 | 18 | m | |||
| Forward transconductance | gFS | VDS =5V, ID =20A | 15 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 823 | pF | ||
| Output capacitance | Coss | 138 | ||||
| Reverse transfer capacitance | Crss | 100 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=10A | 13 | nC | ||
| Gate-source charge | Qgs | 3 | ||||
| Gate-drain charge | Qg | 4.5 | ||||
| Turn-on delay time | td(on) | VDD=15V,VGS=10V, RL=1.8,RGEN=1.8 | 10 | ns | ||
| Turn-on rise time | tr | 8 | ||||
| Turn-off delay time | td(off) | 30 | ||||
| Turn-off fall time | tf | 5 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | TJ = 25C, IF = 10A di/dt = 100A/s(Note1) | 22 | 35 | ns | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 10A di/dt = 100A/s(Note1) | 12 | 20 | nC | |
2411121115_JSCJ-CJBM3020_C504188.pdf
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