Dual N Channel MOSFET JSCJ CJCD2003 with Advanced Trench Technology and ESD Protection Capabilities
Key Attributes
Model Number:
CJCD2003
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
18V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.2mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV;1V;4.5V;6.2V
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.95nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
17nC
Mfr. Part #:
CJCD2003
Package:
DFNWB-6-EP(3x2)
Product Description
Product Overview
The CJCD2003 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a DFNWB2x3-6L-C.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJCD2003
- Package: DFNWB2x3-6L-C
- Material: Plastic-Encapsulate
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 18 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 10 | A | |||
| Pulsed Drain Current | IDM | * | 50 | A | ||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | |||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V (BR) DSS | VGS = 0V, ID =250A | 18 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =4.5V, ID =3A | 4.5 | 4.8 | m | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =4.0V, ID =3A | 5.0 | 5.5 | m | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =3.8V, ID =3A | 6.2 | 6.8 | m | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =3.1V, ID =3A | 7.2 | 8.2 | m | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =2.5V, ID =3A | 9.2 | 10.5 | m | |
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =7A | 9 | S | ||
| Drain-Source Diode Characteristics | ||||||
| Diode forward voltage(note 1) | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Diode Forward Current | IS | 6.0 | A | |||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 6.4 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 1950 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 36 | pF | ||
| Total gate charge | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 17 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 2.0 | nC | ||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 5.1 | nC | ||
| SWITCHING PARAMETERS(note 2) | ||||||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 2.2 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 5.9 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 40 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 90 | ns | ||
2411121115_JSCJ-CJCD2003_C504180.pdf
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