High reliability transistor JSMSEMI NJW0281G-JSM with 150 degree Celsius maximum junction temperature
Key Attributes
Model Number:
NJW0281G-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
150W
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
250V
Mfr. Part #:
NJW0281G-JSM
Package:
TO-3PN
Product Description
Product Overview
The NJW0281G/NJW0302G are semiconductor discrete devices from JSMICRO Semiconductor, designed for general-purpose amplification, audio power amplification, power supply regulation, and other electronic circuits. These transistors feature high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model Numbers: NJW0281G, NJW0302G
- Type: Semiconductor Discrete Devices
Technical Specifications
| Parameter | NJW0281G/NJW0302G |
| Vceo | 250V |
| Ic | 15A |
| Pc | 150W |
| VCBO | 250V |
| VEBO | 6V |
| IB | 1.5A |
| Tj | 150 |
| Tstg | -55~+150 |
| VCBO (IC=1mA, IB=0) | 250V |
| VCEO (IC=10mA, IB=0) | 250V |
| VEBO (IC=1mA, IC=0) | 6V |
| ICBO (VCB=100V, IE=0) | 0.1mA |
| ICEO (VCE=80V, IB=0) | 0.1mA |
| IEBO (VEB=4V, IC=0) | 0.1mA |
| Hfe*1 (VCE=5V, IC=1A) | 55 |
| Hfe*2 (VCE=5V, IC=5A) | 35 |
| VCE(sat)*1 (IC=4A, IB=0.4A) | 1.5V |
| VCE(sat)*2 (IC=6A, IB=0.6A) | 2.5V |
| VBE(ON) (VCE=5V, IC=1A) | 1.5V |
| fT (VCE=5V, IC=1A) | 30MHz |
2401051657_JSMSEMI-NJW0281G-JSM_C7498973.pdf
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