Dual N Channel MOSFET JSCJ CJS9004 with Common Drain Configuration and ESD Protection Features
Key Attributes
Model Number:
CJS9004
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
195pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.04nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
CJS9004
Package:
TSSOP-8
Product Description
Product Overview
The CJS9004 is a Dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: CJS9004
- Package: TSSOP8
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | Ta=25 | 10 | A | ||
| Pulsed Drain Current | IDM | * | 50 | A | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10 s) | 260 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±4.5V, VDS = 0V | ±1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±8V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.9 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 6.0 | 7.0 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =4.0V, ID =3A | 7.5 | 8.0 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =3A | 8.0 | 9.0 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =3.1V, ID =3A | 8.9 | 10 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 9.7 | 12 | mΩ | |
| Forward tranconductance | gFS | VDS =5V, ID =7A | 8 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 0.7 | 1 | V | |
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 225 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 195 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 1040 | pF | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 13 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 2.8 | nC | ||
| Gate-drain charge | Qgd | VDS =10V,VGS =4.5V,ID =7A | 5.6 | nC | ||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 28 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 64 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 90 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 58 | ns |
2411121115_JSCJ-CJS9004_C504163.pdf
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